US3a thru US3m page: 1 frontier electronics corp. 667 e. cochran street, simi valley, ca 93065 tel: (805) 522-9998 fax: (805) 522-9989 e-mail: frontiersales@frontierusa.com web: http://www.frontierusa.com 3a ultra fast recovery surface mount rectifier US3a thru US3m features z low profile package z plastic package has underwriters laboratory 94v-0 z ideal for surface mounted application z glass passivated chip junction z built-in strain relief design z ultra fast recovery time for high efficient z high temperature soldering 250c/10 seconds at terminals mechanical data z case: jedec do-214ab molded plastic body, do-214ab (smc), dimens ions in inches and (millimeters) z terminal: solder plated, solderable per mil-std- 750 method 2026 z polarity: color band denotes cathode z weight: 0.21grams maximum ratings and electrical characteristics ratings at 25 c ambient temperature unless otherwise specified single phase, half wave, 60 hz, resistive or inducti ve load. for capacitive load, derate current by 20% ratings symbol US3a US3b US3d US3g US3j US3k US3m units maximum recurrent peak reverse voltage v rrm 50 100 200 400 600 800 1000 v maximum rms voltage v rms 35 70 140 280 420 560 700 v maximum dc blocking voltage v dc 50 100 200 400 600 800 1000 v maximum average forward rectified current at t l =75 c i o 3.0 a peak forward surge current, 8.3ms single half sine-wave superimposed on rated load i fsm 100 a typical junction capacitance (note 1) c j 75 pf typical thermal resistance (note 2) r jl 15 /w storage temperature range t stg -55 to + 150 operating temperature range t op -55 to + 150 electrical characteristics (a t t a =25 c unless otherwise noted) characteristics symbol US3a US3b US3d US3g US3j US3k US3m units maximum forward voltage at i o dc v f 1.0 1.3 1.7 1.85 v maximum dc reverse current at ta=25 c i r 10 a maximum dc reverse current at ta=125 c i r 250 a maximum reverse recovery time (note 3) t rr 50 75 ns marking US3a US3b US3d US3g US3j US3k US3m notes: 1. measured at 1 mhz and applied reverse voltage 0f 4.0 volts 2. thermal resistance from junction to am bient and junction to lead p.c.b. mounted on 0.3 x 0.3?(8.0 x 8.0mm) copper pad areas 3. reverse recovery test conditions: i f =0.5a, i r =1.0a, i rr =0.25a .060(1.52) .030(0.76) .320(8.13) .305(7.75) .103(2.62) .079(2.06) .280(7.11) .260(6.60) .245(6.22) .220(5.59) .126(3.20) .114(2.90) cathode
US3a thru US3m page: 2 ratings and characteristic curve US3a thru US3m fig. 6-typical junction capacitance .1 .2 .4 1.0 2 4 10 20 40 100 reverse voltage (v) 200 100 40 20 10 6 4 2 1 junction capacitance (pf) t j =25 o c +0.5a 0 -0.25a -1.0a trr 1cm set time base for 10/20 ns/cm fig. 4-typical instantaneous forward characteristics .2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8 2.0 instantaneous forward voltage (v) US3a~US3d US3j~US3m 10 1.0 0.1 .01 .001 instantaneous forward current (a) US3g fig. 3-typical reverse characteristics 0 20 40 60 80 100 120 140 percent of rated peak reverse voltage (%) 100 10 1.0 .1 .01 instantaneous reverse current (ua) t j =25 o c t j =80 o c t j =125 o c average forward current (a) 3.0 2.0 1.0 0 0 20 40 60 80 100 120 140 1 60 180 20 0 lead temperature (c) fig. 2-typical forward current derating curve single phase half wave 60hz resistive or inductive load p.c.b mounted on 0.30.3?(8.08.0mm) copper pad areas fig. 5-maximum non-repetitive forward surge current 100 80 60 40 20 0 peak forward surge current (a) 0 10 100 number of cycles at 60h z 8.3 ms single half sine wave (jedec method) fig. 1-test circuit diagram and reverse recovery time characteristic pulse generator (note 2) (+) 25 v dc (approx) (-) d.u.t. 1 non inductive oscilloscope (note 1) 50 no inductive 10 no inductive (-) (+) note: 1. rise time=7ns max. input impedance=1 mohms 22pf 2. rise time =10ns max. source impedance=50 ohms
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